Semiconductor device

ABSTRACT

In order to reduce electric field concentration in a semiconductor device including a main transistor section and a sense transistor section, the semiconductor device is provided, the semiconductor device including a semiconductor substrate of a first conductivity type, a main transistor section in an active region on the semiconductor substrate, and a sense transistor section outside the active region on the semiconductor substrate, wherein the active region is provided with a main well region of a second conductivity type, and wherein the sense transistor section has a sense gate trench section formed extending from the outside of the active region to the main well region on the front surface of the semiconductor substrate.

The contents of the following Japanese patent applications areincorporated herein by reference:

NO. 2015-142191 filed in JP on Jul. 16, 2015, and

NO. 2015-183207 filed in JP on Sep. 16, 2015.

BACKGROUND

1. Technical Field

The present invention relates to a semiconductor device.

2. Related Art

Conventionally, in a semiconductor element, a constitution in which asense element that detects a current flowing through a main transistorof an active region is provided has been known (refer to, for example,Patent Document 1).

Prior Art Document

Patent Document 1: Japanese Patent Application Publication No.2010-238721

In a semiconductor element, it is preferable to reduce electric fieldconcentration.

SUMMARY

In one aspect of the present invention, a semiconductor device isprovided, the semiconductor device including a semiconductor substrateof a first conductivity type, a main transistor section in an activeregion of the semiconductor substrate, and a sense transistor sectionoutside the active region of the semiconductor substrate, wherein theactive region is provided with a main well region of a secondconductivity type, and wherein the sense transistor section has a sensegate trench section formed extending from the outside of the activeregion to the main well region on the front surface of the semiconductorsubstrate.

The summary clause does not necessarily describe all necessary featuresof the embodiments of the present invention. The present invention mayalso be a sub-combination of the features described above.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view showing one example of a semiconductor device 100.

FIG. 2 is a plan view showing one example of a main transistor section104 and a sense transistor section 108.

FIG. 3 shows one example of a cross-section along b-b′ in FIG. 2.

FIG. 4 shows one example of the cross-section along a-a′ in FIG. 2.

FIG. 5 is a plan view showing another example of the main transistorsection 104 and the sense transistor section 108.

FIG. 6 is a plan view showing another example of the main transistorsection 104 and the sense transistor section 108.

FIG. 7 is a plan view showing one example of a main gate trench section40.

FIG. 8 is a plan view showing another example of the main gate trenchsection 40.

FIG. 9 shows a constitution of a semiconductor device 200 according to acomparative example.

FIG. 10 shows a cross-section along c-c′ in FIG. 9.

FIG. 11 shows the cross-section along d-d′ in FIG. 9.

FIG. 12 shows a cross-section of the semiconductor device 100 accordingto a second embodiment.

FIG. 13 shows a cross-section along a gate trench when the structureshown in FIG. 12 is applied to the semiconductor device 100 shown inFIG. 2 or FIG. 6.

FIG. 14 shows a variation of the structure of a gate trench section.

FIG. 15 illustrates a part of a step of manufacturing the main gatetrench section 40 and an emitter region 12 in the semiconductor device100.

FIG. 16 illustrates the shape of the main gate trench section 40.

FIG. 17 illustrates the shape of the emitter region 12 and a main gateconductive section 44.

FIG. 18A shows a variation of the shape of a shoulder section 33.

FIG. 18B shows a variation of the shape of the shoulder section 33.

FIG. 19 shows one example of a step of manufacturing the main gateconductive section 44.

FIG. 20 shows a configurational example of a sense gate trench section140 and the main gate trench section 40.

DESCRIPTION OF EXEMPLARY EMBODIMENTS

Hereinafter, embodiments of the present invention will be described. Theembodiments do not limit the invention according to the claims, and allthe combinations of the features described in the embodiments are notnecessarily essential to means provided by aspects of the invention.

FIG. 1 is a plan view showing one example of a semiconductor device 100.The semiconductor device 100 is a semiconductor chip having asemiconductor substrate in which an active region 102 and an outerregion 105 are formed. The semiconductor substrate has a firstconductivity type. In the present example, the first conductivity typeand a second conductivity type will be described as N-type and P-type,respectively. However, the first conductivity type may be P-type, andthe second conductivity type may be N-type.

The active region 102 is a region through which a current flows when thesemiconductor device 100 is driven, for example. The active region 102is provided with a plurality of main transistor sections 104 and diodesections 106. The main transistor section 104 includes transistors suchas IGBT (Insulated Gate Bipolar Transistor). The diode section 106includes diodes such as FWD (Free Wheel Diode).

Each of the transistors included in the plurality of main transistorsections 104 is electrically provided in parallel with each other, andthe same potential is applied to each terminal of gate, emitter, andcollector. Each of the diodes included in the plurality of diodesections 106 is electrically provided in parallel with each other, andthe same potential is applied to each terminal of emitter (or anode) andcathode.

The main transistor section 104 and the diode section 106 may bealternately arrayed along a predetermined array direction. Also, theplurality of main transistor sections 104 may be arrayed in a directionorthogonal to the above-described array direction. Also, the pluralityof diode sections 106 may be arrayed in a direction orthogonal to theabove-described array direction. A gate runner that transmits a gatepotential may be provided between two main transistor sections 104 andbetween two diode sections 106.

The outer region 105 is provided outside the active region 102. Theexpression of “outside the active region 102” refers to a region whichis not surrounded by the active region 102, and which is closer to anend portion of the semiconductor substrate 10 than the center of theactive region 102. The outer region 105 may surround the active region102. An edge termination structure 109 or the like may be providedfurther outside the outer region 105. The edge termination structure 109reduces electric field concentration in the semiconductor substrate onits front surface side. The edge termination structure 109 hasstructures of a guard ring, a field plate, a RESURF (reduced surfacefield), and a combination thereof, for example. Also, a well region ofthe active region 102 and a well region of the outer region 105 areseparated.

The outer region 105 is provided with a sense transistor section 108.The sense transistor section 108 detects a current flowing through themain transistor section 104. For example, a current flows through thesense transistor section 108, that is proportional to a main currentflowing through the main transistor section 104, and is smaller than themain current. For example, the sense transistor section 108 is connectedto the main transistor section 104 in parallel, and the same gatepotential is input. However, a resistance greater than a resistanceconnected to the main transistor section 104 is connected to the sensetransistor section 108.

The sense transistor section 108 is provided at a position that does notoppose the diode section 106. The sense transistor section 108 of thepresent example is provided at a position that opposes the maintransistor section 104. A gate pad 103 may be formed adjacent to thesense transistor section 108. The area of the gate pad 103 may be largerthan the area of the sense transistor section 108. The gate pad 103 andthe sense transistor section 108 are both provided at a position thatopposes the main transistor section 104.

FIG. 2 is a plan view showing one example of the main transistor section104 and the sense transistor section 108. FIG. 2 shows a portion wherethe main transistor section 104 opposes the gate pad 103 and the sensetransistor section 108.

The active region 102 is provided with a main well region 17 of P⁺-type.The constitution of at least a part of the main transistor section 104is formed in the main well region 17. For example, at least a part ofthe main gate trench section 40 of the main transistor section 104 isformed in the main well region 17. In addition, FIG. 2 and otherdrawings show end sides of the main well region 17, the main emitterelectrode 52, and other elements along trench sections. However, themain well region 17, the main emitter electrode 52, and other elementsmay further extend along the array direction of the trench sections.

The sense transistor section 108 has a sense gate trench section 140.The sense gate trench section 140 is formed extending from the outerregion 105 to the main well region 17 on the front surface of thesemiconductor substrate. The main well region 17 may refer to a regionwhich has a conductivity type different from that of the semiconductorsubstrate, and which is separated from a sense well region 117 by a wellseparation region 120 having the same conductivity type as that of thesemiconductor substrate, for example. Also, the main well region 17 mayrefer to a region which is provided outside a base region 14 in theactive region 102, and which has an impurity concentration higher thanthat of the base region 14.

The sense gate trench section 140 extends to the main well region 17 ofthe active region 102, so that the sense transistor section 108 can beprevented from floating with respect to the active region 102. Forexample, when a voltage applied to the active region 102 fluctuatesgreatly, the sense transistor section 108 can follow the voltagefluctuations via the sense gate trench section 140 extended to the mainwell region 17. For this reason, it is possible to reduce a voltagedifference between the main transistor section 104 and the sensetransistor section 108, and then reduce electric field concentration.

Also, the sense gate trench section 140 and the main gate trench section40 may be electrically connected. Thereby, the sense gate trench section140 can follow the voltage fluctuations in the main gate trench section40 as well.

The sense gate trench section 140 of the present example extends to themain well region 17 to be connected, within the semiconductor substrate10, to the main gate trench section 40 provided in the active region102. That is, the sense gate trench section 140 and the main gate trenchsection 40 are consecutively formed.

In the example of FIG. 2, the main transistor section 104 that opposesthe sense transistor section 108 has the main emitter electrode 52, themain gate trench section 40, a main dummy trench section 30, the mainwell region 17, an emitter region 12, the base region 14, a contactregion 15, and a contact hole 54 in the chip on its front surface side.Also, the sense transistor section 108 has a gate electrode 151, a senseemitter electrode 152, the sense gate trench section 140, a sense dummytrench section 130, a sense well region 117, an emitter region 112, abase region 114, a contact region 115, a contact hole 154, and a contacthole 155 in the chip on its front surface side.

The main gate trench section 40, the main dummy trench section 30, themain well region 17, the emitter region 12, the base region 14, thecontact region 15, the sense gate trench section 140, the sense dummytrench section 130, the sense well region 117, the emitter region 112,the base region 114, and the contact region 115 are formed within thesemiconductor substrate on its front surface side. Also, the mainemitter electrode 52, the sense emitter electrode 152, and the gateelectrode 151 are provided over the front surface of the semiconductorsubstrate.

The main well region 17 of P⁺-type and the sense well region 117 ofP⁺-type are formed separately. In the present example, the wellseparation region 120 having the same conductivity type as thesemiconductor substrate (N⁻-type in the present example) is formedbetween the main well region 17 and the sense well region 117.

Although an interlayer insulating film is formed between the mainemitter electrode 52, the sense emitter electrode 152 and the gateelectrode 151, and the front surface of the semiconductor substrate, itis omitted in FIG. 2. The contact hole 54, the contact hole 154, and thecontact hole 155 are formed penetrating through the interlayerinsulating film. The main emitter electrode 52 is in contact with thesemiconductor substrate through the contact hole 54. The sense emitterelectrode 152 is in contact with the semiconductor substrate through thecontact hole 154. The gate electrode 151 is in contact with thesemiconductor substrate through the contact hole 155.

The main emitter electrode 52, the sense emitter electrode 152, and thegate electrode 151 are formed of a material containing a metal. Forexample, at least a part of a region of each electrode is formed ofaluminum. Each electrode may have a region formed of a materialcontaining tungsten.

One or more main gate trench sections 40 and one or more main dummytrench sections 30 are arrayed at a predetermined interval along apredetermined array direction in a region of the main transistor section104. The main dummy trench section 30 is formed extending in apredetermined extending direction on the front surface of thesemiconductor substrate. The main dummy trench section 30 in the presentexample has a linear shape, and is formed extending in a directionperpendicular to the above-described array direction.

The main gate trench section 40 is formed in parallel with the maindummy trench section 30. However, the main gate trench section 40 islonger than the main dummy trench section 30 in its extending direction.

One or more sense gate trench sections 140 and one or more sense dummytrench sections 130 are arrayed at a predetermined interval along apredetermined array direction in a region of the sense transistorsection 108. The array direction and the interval of the trench sectionsin the sense transistor section 108 may be the same as the arraydirection and the interval of the trench sections in the main transistorsection 104. The sense gate trench section 140 is provided at a positionthat opposes the main gate trench section 40, and the sense dummy trenchsection 130 is provided at a position that opposes the main dummy trenchsection 30.

The sense dummy trench section 130 is formed extending in apredetermined extending direction on the front surface of thesemiconductor substrate. The extending direction of the trench sectionsin the sense transistor section 108 may be the same as the extendingdirection of the trench sections in the main transistor section 104. Thesense dummy trench section 130 in the present example has a linearshape, and is formed extending in a direction perpendicular to theabove-described array direction.

The sense gate trench section 140 is formed in parallel with the sensedummy trench section 130. However, the sense gate trench section 140 islonger than the sense dummy trench section 130 in its extendingdirection. The sense gate trench section 140 is formed from the sensewell region 117 to the main well region 17 crossing the well separationregion 120. The sense gate trench section 140 of the present example isconnected to the main gate trench section 40 in the main well region 17.

An end portion of the sense dummy trench section 130 in the presentexample is formed in the sense well region 117. In another example, thesense dummy trench section 130 may extend to the main well region 17.The sense dummy trench section 130 may be connected to the main dummytrench section 30 that opposes the sense dummy trench section 130. Inthis case, the sense dummy trench section 130 is formed crossing thewell separation region 120.

The diffusion depth of the main well region 17 may be deeper than thedepths of the main gate trench section 40 and the main dummy trenchsection 30. The bottom of the end of the main dummy trench section 30 inits extending direction may be covered with the main well region 17.Also, the diffusion depth of the sense well region 117 may be deeperthan the depths of the sense gate trench section 140 and the sense dummytrench section 130. The bottom of the end of the sense dummy trenchsection 130 in its extending direction may be covered with the sensewell region 117.

The sense gate trench section 140 has an opposing section 141 and aprotruding section 143. The opposing section 141 is formed extending inthe above-described extending direction in a range that opposes thesense dummy trench section 130. That is, the opposing section 141 isformed in parallel with the sense dummy trench section 130.

The protruding section 143 is formed extending further from the opposingsection 141 in a range that does not oppose the sense dummy trenchsection 130. The protruding section 143 is provided at both ends of theopposing section 141. The protruding section 143 closer to the maintransistor section 104 extends to the main well region 17. Also, theprotruding section 143 closer to an opposite side connects two opposingsections 141 provided at both sides of the sense dummy trench section130. At least a part of the protruding section 143 may have a curvedshape.

The contact hole 155 is formed in an insulating layer that covers theprotruding section 143 which is on the side opposite from the maintransistor section 104. The contact hole 155 may be formed in a regioncorresponding to the protruding section 143 farthest from the opposingsection 141. In the protruding section 143 of the present example, aregion farthest from the opposing section 141 has a portion extending ina direction orthogonal to the opposing section 141. The contact hole 155may be formed corresponding to the portion of the protruding section143.

The gate electrode 151 is formed covering a part of the protrudingsection 143 which is closer to the side opposite from the maintransistor section 104. The gate electrode 151 is formed covering aportion in the protruding section 143 where the contact hole 155 isprovided. The gate electrode 151 of the present example is not formedover the opposing section 141 and the sense dummy trench section 130.

The main emitter electrode 52 is formed over the main gate trenchsection 40, the main dummy trench section 30, the main well region 17,the emitter region 12, the base region 14, and the contact region 15.One end of the main emitter electrode 52 of the present example isprovided over the well separation region 120. The protruding section 143may be formed in its entirety in the sense well region 117.

The base region 14 is formed in the regions of the main transistorsection 104 sandwiched by each trench section. The base region 114 isformed in the regions of the sense transistor section 108 sandwiched byeach trench section. The conductivity type of the base regions 14 and114 is P⁻-type having an impurity concentration lower than that of themain well region 17 and the sense well region 117.

The contact regions 15 and 115 of P⁺-type having an impurityconcentration higher than that of the base regions 14 and 114 are formedon the front surface of the base regions 14 and 114. Also, the emitterregions 12 and 112 of N⁺-type having an impurity concentration higherthan that of the semiconductor substrate are selectively formed in apart on the front surface of the contact regions 15 and 115.

The contact regions 15 and 115 and the emitter regions 12 and 112 areeach formed from one adjacent trench section to the other trenchsection. One or more contact regions and one or more emitter regions areformed in the region sandwiched by each trench section so as to bealternately exposed on the front surface of the semiconductor substratealong the extending direction of the trench sections. The number ofrepetition times of the contact region 115 and the emitter region 112 inthe sense transistor section 108 may be lower than the number ofrepetition times of the contact region 15 and the emitter region 12 inthe main transistor section 104.

In the main transistor section 104 and the sense transistor section 108,the contact holes 54 and 154 are formed over each region of the contactregions, the emitter regions, and the dummy trench sections. In order tomaximize the contact areas between the emitter regions and the emitterelectrodes, the contact holes 54 and 154 are formed from one adjacenttrench section to the other trench section. Also, the contact holes 54and 154 may be formed so as to expose the entire front surface of theemitter regions. Also, the contact holes 54 and 154 may be formed toexpose the entire front surface of the contact regions as well. However,the contact holes 54 and 154 are not formed in regions corresponding tothe base regions and the well regions.

Also, the contact holes 54 and 154 are formed over the gate trenchsections in a range that opposes the emitter regions as well. Thecontact holes 54 and 154 of the present example expose the gate trenchsections in a range that opposes the emitter regions and the contactregions. In addition, as will be described later, insulating sectionsthat insulate the electrodes within the trenches and the emitterelectrodes are formed at an upper end within the trenches of the gatetrench sections.

Also, the contact holes 54 and 154 are formed so as to expose the dummytrench sections in a range that opposes the emitter regions. The contactholes 54 and 154 of the present example expose the dummy trench sectionsin a range that opposes the emitter regions and the contact regions. Theemitter electrodes are in contact with the electrodes within the exposeddummy trench sections.

In the semiconductor device 100 of the present example, the gate pad 103is formed adjacent to the sense transistor section 108. The area of thegate pad 103 may be larger than the area of the region of the sensetransistor section 108 where the IGBT is formed. The gate pad 103 andthe sense transistor section 108 are both provided at positions thatoppose the main transistor section 104.

The main gate trench section 40 that opposes the gate pad 103 may have ashape different from that of the main gate trench section 40 thatopposes the sense transistor section 108. In the present example, themain gate trench section 40 that opposes the gate pad 103 is notconnected to the sense gate trench section 140. The main gate trenchsection 40 that opposes the gate pad 103 has the opposing section 41 andthe protruding section 43.

The structure of the opposing section 41 and the structures of the mainemitter electrode 52, the main well region 17, the contact hole 54, theemitter region 12, the contact region 15, and the base region 14 whichcorrespond to the opposing section 41 are similar to the structure ofthe main gate trench section 40 or the like that opposes the sensetransistor section 108. The main emitter electrode 52, the main wellregion 17, and the contact hole 54 may be consecutively formed in both aregion that opposes the gate pad 103 and a region that opposes the sensetransistor section 108.

The opposing section 41 is provided at a position that opposes the maindummy trench section 30. The protruding section 43 is provided extendingfrom the opposing section 41, and is provided at a position that doesnot oppose the main dummy trench section 30. In the present example, theentire protruding section 43 is formed in the main well region 17.

The protruding section 43 connects two opposing sections 41 provided atboth sides of the main dummy trench section 30. The protruding section43 has a portion that extends in substantially parallel with the arraydirection of the trench sections in a region farthest from the maindummy trench section 30. The portion of the protruding section 43 isprovided in a region covered with the gate electrode 50. Thesemiconductor device 100 further includes a contact hole 55 providedcorresponding to the portion of the protruding section 143.

The gate electrode 50 may be integrally formed with the gate electrode151 provided corresponding to the sense transistor section 108. The gatepad 103 is formed in a part of regions of the gate electrode 50 and thegate electrode 151.

The gate electrode 50 is in contact with electrodes formed within thetrenches of the protruding section 43 through the contact hole 55.Thereby, the main gate trench section 40 that opposes the gate pad 103and the gate electrode 50 are connected.

FIG. 3 shows one example of the cross-section along b-b′ in FIG. 2. Thesemiconductor device 100 of the present example has the semiconductorsubstrate 10, an interlayer insulating film 26, a main emitter electrode52, a sense emitter electrode 152, a gate electrode 151, and a collectorelectrode 24 in the cross-section thereof. The interlayer insulatingfilm 26 is formed between the main emitter electrode 52, the senseemitter electrode 152 and the gate electrode 151, and the semiconductorsubstrate 10. The contact holes 54, 154, and 155 are formed in theinterlayer insulating film 26.

The semiconductor substrate 10 has the sense well region 117 and themain well region 17 in the cross-section thereof. The base region 14 andthe base region 114 are formed in a region surrounded by the main wellregion 17, and a region surrounded by the sense well region 117,respectively. The drift region 18 of N⁻-type is formed in the sense wellregion 117, the main well region 17, and the base regions 14 and 114 ontheir rear surface sides.

A buffer region 20 of N⁻-type is formed in the drift region 18 on itsrear surface side. A collector region 22 of P⁺-type is formed in thebuffer region 20 on its rear surface side. The collector electrode 24 isformed in the collector region 22 on its rear surface side. Also, in thepresent specification, one surface of each member such as a substrate, alayer, and a region closer to the sense emitter electrode 152 isreferred to as the front surface, and the other surface of the samecloser to the collector electrode 24 is referred to as the rear surfaceor the bottom section. Also, a direction which couples the sense emitterelectrode 152 and the collector electrode 24 is referred to as the depthdirection.

Also, the main well region 17 and the sense well region 117 areseparated by the well separation region 120. The well separation region120 is formed extending from the drift region 18, and is exposed on thefront surface of the semiconductor substrate 10 passing between the mainwell region 17 and the sense well region 117. Thereby, the current isprevented from flowing between the main transistor section 104 and thesense transistor section 108.

Meanwhile, the sense gate trench section 140 shown in FIG. 2 is formedwithin the main well region 17 crossing the well separation region 120.For this reason, the sense well region 117 can be prevented from turninginto floating with respect to the main well region 17. For example, themain well region 17 and the electrode within the sense gate trenchsection 140 are capacitive-coupled, and the electrode within the sensegate trench section 140 and the sense well region 117 arecapacitive-coupled. For this reason, when large voltage fluctuations aregenerated in the main well region 17, the sense well region 117 canfollow the voltage fluctuations via the sense gate trench section 140.

Also, the sense gate conductive section 144 of the sense gate trenchsection 140 and the main gate conductive section 44 of the main gatetrench section 40 are electrically connected. For this reason, the sensegate trench section 140 can follow the voltage fluctuations of the maingate trench section 40 as well. For this reason, electric fieldconcentration in the end portion of the main well region 17 can bereduced.

The contact hole 54 exposes at least a part of the emitter region 12 andthe contact region 15 on the front surface of the semiconductorsubstrate 10. The main emitter electrode 52 passes through the contacthole 54, and is in contact with the emitter region 12 and the contactregion 15.

The contact hole 154 exposes at least a part of the emitter region 112and the contact regions 115 on the front surface of the semiconductorsubstrate 10. The sense emitter electrode 152 passes through the contacthole 54 and is in contact with the emitter region 112 and the contactregions 115.

The contact hole 155 exposes at least a part of the protruding section143 of the sense gate trench section 140 on the front surface of thesemiconductor substrate 10. The sense gate trench section 140 has aninsulating film 142 formed on an inner wall of the sense gate trench anda sense gate conductive section 144 filled within the sense gate trenchinside the insulating film 142.

At least a part of the front surface of the sense gate conductivesection 144 is exposed by the contact hole 155. The gate electrode 151passes through the contact hole 155, and is in contact with the frontsurface of the sense gate conductive section 144. As will be describedlater, a sense gate insulating section that insulates the sense emitterelectrode 152 and the sense gate conductive section 144 is formed in thevicinity of the upper end of the sense gate trench. However, in thesense gate trench section 140 exposed by the contact hole 155, the sensegate insulating section is not formed, and at least a part of the frontsurface of the sense gate conductive section 144 is exposed.

The sense gate trench section 140 exposed by the contact hole 155 mayhave the same cross-section structure as that of the sense dummy trenchsection 130 which will be described later. For example, in a part of theprotruding section 143, at least a part of an end surface of the sensegate conductive section 144 closer to an opening of the gate trench (thefront surface in the present example) has the same height as the frontsurface of the semiconductor substrate 10. The entire front surface ofthe sense gate conductive section 144 may have the same height as thefront surface of the semiconductor substrate 10.

Also, the gate trench of the sense gate trench section 140 exposed bythe contact hole 155 may be shallower than the gate trench of the sensegate trench section 140 in the opposing section 141. That is, the sensegate trench of the opposing section 141 is deeper than a part of thesense gate trench of the protruding section 143. The sense gate trenchof the sense gate trench section 140 exposed by the contact hole 155 maybe formed at the same depth as the sense dummy trench which will bedescribed later. Also, the gate trench of the sense gate trench section140 exposed by the contact hole 155 may have the same width as the sensedummy trench. By such a constitution, unevenness of the front surface ofthe semiconductor substrate 10 can be decreased.

However, the structure of the sense gate trench section 140 is notlimited to the example of FIG. 3. For example, the sense gate trenchsection 140 may have an insulating section provided over the sense gateconductive section 144 within the sense gate trench. In a region exposedby the contact hole 155, the insulating section may have a through hole.The gate electrode 151 may contact the sense gate conductive section 144through the through hole.

FIG. 4 shows one example of the cross-section along a-a′ in FIG. 2. Thecross-section along a-a′ is a cross-section in the sense transistorsection 108. Although the structure of the sense transistor section 108will be described in FIG. 4, the main transistor section 104 also hasthe similar structure in a cross-section parallel with the cross-sectionalong a-a′.

The semiconductor device 100 of the present example has thesemiconductor substrate 10, the sense emitter electrode 152, and thecollector electrode 24 in the cross-section. The sense emitter electrode152 is formed on the front surface of the semiconductor substrate 10.The sense emitter electrode 152 is electrically connected to the emitterterminal 53. The emitter terminal 53 may be electrically connected tothe main emitter electrode 52 as well.

The collector electrode 24 is formed on the rear surface of thesemiconductor substrate 10. The collector electrode 24 is electricallyconnected to the collector terminal. The collector electrode 24 isformed of a conductive material such as a metal. The collector electrode24 may be provided as an integral electrode for the main transistorsection 104, the sense transistor section 108, and the diode section106.

The semiconductor substrate 10 may be a silicon substrate, and may alsobe a silicon carbide substrate, a nitride semiconductor substrate, orthe like. The base region 114 of P⁻-type is formed in the semiconductorsubstrate 10 on its front surface side. Also, the emitter region 112 ofN⁺-type is selectively formed in a part of a region of the base region114 on its front surface side. In the main transistor section 104, theemitter region 12 and the base region 14 are formed instead of theemitter region 112 and the base region 114. The emitter regions 12 and112 are separated from each other. Also, the base regions 14 and 114 areseparated from each other.

Also, the semiconductor substrate 10 further has an accumulation region116 of N⁺-type, the drift region 18 of N⁻-type, the buffer region 20 ofN⁻-type, and the collector region 22 of P⁺-type. The drift region 18,the buffer region 20, and the collector region 22 are consecutivelyformed in both the main transistor section 104 and the sense transistorsection 108. Also, in the diode section 106, a cathode region of N⁺-typeis formed instead of the collector region 22.

The accumulation region 116 is formed in the base region 114 on its rearsurface side. The impurity concentration of the accumulation region 116is higher than the impurity concentration of the drift region 18. Theaccumulation region 116 in the main transistor section 104 is formedseparately from the accumulation region 116 of the sense transistorsection 108.

The accumulation region 116 is formed between adjacent trenches. Forexample, in the sense transistor section 108, the accumulation region116 is formed between the sense dummy trench section 130 and the sensegate trench section 140. The accumulation region 116 may be provided soas to cover the entire region between the sense dummy trench section 130and the sense gate trench section 140. A carrier injection enhancementeffect (IE effect) can be increased, and an on-voltage can be decreasedby providing the accumulation region 116.

The drift region 18 is formed in the accumulation region 116 on its rearsurface side. The buffer region 20 is formed in the drift region 18 onits rear surface side. The impurity concentration of the buffer region20 is higher than the impurity concentration of the drift region 18. Thebuffer region 20 may function as a field stop layer that prevents adepletion layer spreading from the rear surface side of the base region114 from reaching the collector region 22. The collector region 22 isformed in the buffer region 20 on its rear surface side. Also, thecollector electrode 24 is provided on the rear surface of the collectorregion 22.

One or more sense gate trench sections 140 and one or more sense dummytrench sections 130 are formed in the semiconductor substrate 10 on itsfront surface side in the cross-section. Each trench section penetratesthrough the base region 114 from the front surface of the semiconductorsubstrate 10 and reaches the drift region 18. In the present example,the sense gate trench section 140 and the sense dummy trench section 130reach the drift region 18, penetrating through the emitter region 112,the base region 114, and the accumulation region 116 from the frontsurface of the semiconductor substrate 10.

The sense gate trench section 140 has a sense gate trench, theinsulating film 142, the sense gate conductive section 144, and thesense gate insulating section 137 which are formed in the semiconductorsubstrate 10 on its front surface side. The insulating film 142 isformed covering the inner wall of the sense gate trench. The insulatingfilm 142 may be formed by oxidizing or nitrogenating the semiconductoron the inner wall of the sense gate trench. The sense gate conductivesection 144 is formed inside the insulating film 142 within the sensegate trench. That is, the insulating film 142 insulates the sense gateconductive section 144 and the semiconductor substrate 10. The sensegate conductive section 144 is formed of a conductive material such aspolysilicon.

The sense gate insulating section 137 is formed over the sense gateconductive section 144 within the sense gate trench, and insulates thesense gate conductive section 144 and the sense emitter electrode 152.In the present example, an end surface of the sense gate conductivesection 144 closer to an opening of the sense gate trench is providedcloser to the inside of the semiconductor substrate 10 than the frontsurface of the semiconductor substrate 10. Here, the front surface ofthe semiconductor substrate 10 may refer to a front surface of theemitter region 112. Also, there are cases where the end surface of thesense gate conductive section 144 closer to the opening of the sensegate trench is referred to as the front surface of the sense gateconductive section 144.

The sense gate insulating section 137 is filled within the sense gatetrench on the upper side of the front surface of the sense gateconductive section 144. The sense gate insulating section 137 isprovided covering the entire front surface of the sense gate conductivesection 144. At least a part of an end surface of the sense gateinsulating section 137 closer to the opening of the sense gate trench isprovided at the same height as the front surface of the semiconductorsubstrate 10. In addition, there are cases where the end surface of thesense gate insulating section 137 closer to the sense gate trench isreferred to as the front surface of the sense gate insulating section137.

The front surface of the sense gate insulating section 137 is in contactwith the sense emitter electrode 152. It is preferable that no otherconductive member or insulating member is interposed between the sensegate insulating section 137 and the sense emitter electrode 152. In thisway, unevenness on the front surface of the semiconductor substrate 10can be decreased by forming the sense gate insulating section 137 withinthe sense gate trench.

Also, the entire front surface of the sense gate insulating section 137may be formed on the same surface as the front surface of thesemiconductor substrate 10. In this case, unevenness of the frontsurface of the semiconductor substrate 10 can be further decreased.Therefore, the structure laminated over the front surface of thesemiconductor substrate 10 can be easily formed. Also, the semiconductordevice 100 is miniaturized easily.

The sense gate insulating section 137 includes, for example, a siliconoxide, a silicon nitride, or other insulating materials. The thicknessof the sense gate insulating section 137 in its depth direction may begreater than the thickness of the insulating film 142 in the sense gatetrench bottom section.

The sense gate conductive section 144 at least includes a region thatopposes the base regions 114 adjacent thereto. Each sense gateconductive section 144 is electrically connected to the gate terminal51. The gate terminal 51 may be the gate pad 103. In the presentexample, the sense gate conductive section 144 is electrically connectedto the gate electrode 151 in the protruding section 143 as shown in FIG.2. Also, the gate electrode 151 is electrically connected to the gateterminal 51. If a predetermined voltage is applied to the sense gateconductive section 144 via the gate terminal 51, a channel is formed inthe surface layer of the interface that is in contact with the sensegate trench in the base region 114.

The sense dummy trench section 130 has a sense dummy trench, theinsulating film 132 and the sense dummy conductive section 134, all ofwhich are formed in the semiconductor substrate 10 on its front surfaceside. The insulating film 132 is formed covering the inner wall of thesense dummy trench.

The sense dummy conductive section 134 is formed within the sense dummytrench, and is formed inside the insulating film 132. The insulatingfilm 132 insulates the sense dummy conductive section 134 and thesemiconductor substrate 10. The sense dummy conductive section 134 maybe formed of the same material as the sense gate conductive section 144.For example, the sense dummy conductive section 134 is formed of aconductive material such as polysilicon. The sense dummy conductivesection 134 may have the same length as the sense gate conductivesection 144 in its depth direction.

The sense emitter electrode 152 is in contact with the sense dummyconductive section 134 within the sense dummy trench. The expression of“within the sense dummy trench” includes an opening of the sense dummytrench. That is, at least a part of an end surface of the sense dummyconductive section 134 closer to an opening of the sense dummy trenchhas the same height as the front surface of the semiconductor substrate10, and the sense emitter electrode 152 may be in contact with the endsurface of the sense dummy conductive section 134 having the same heightas the front surface of the semiconductor substrate 10. In addition,there are cases where the end surface of the sense dummy conductivesection 134 closer to the opening of the sense dummy trench is referredto as the front surface of the sense dummy conductive section 134.

Also, in the semiconductor substrate 10 on its front surface side, anopening width W2 of the sense gate trench is larger than an openingwidth W1 of the sense dummy trench. Here, the expression of “the openingwidth” may refer to a maximum width of the widths in the opening. Whenthe opening is in a circular shape, the opening width refers to adiameter in the circular shape. The length of the sense gate trench canbe made longer than that of the sense dummy trench when the sense gatetrench and the sense dummy trench are formed in the same etching step,by increasing the opening width W2 of the sense gate trench. For thisreason, the sense gate trench and the sense dummy trench havingdifferent lengths can be easily formed.

Also, in the example of FIG. 4, the front surface of the sense dummyconductive section 134 is provided at the same position as the openingof the sense dummy trench. In another example, the front surface of thesense dummy conductive section 134 may be provided at a deeper positionwithin the semiconductor substrate 10 than the opening of the sensedummy trench. In this case, the sense emitter electrode 152 is formedwithin the sense dummy trench, and is in contact with the front surfaceof the sense dummy conductive section 134.

Also, the insulating film 132 may not be formed in the vicinity of theend portion of the sense dummy trench closer to the front surface of thesubstrate. Thereby, at least a part of the emitter region 112 is exposedin a side wall of the sense dummy trench. The insulating film 132 may beformed by oxidizing or nitrogenating the semiconductor of the inner wallof the sense dummy trench, and forming the sense dummy conductivesection 134 having a predetermined thickness within the sense dummytrench, and then removing the oxide or nitride film not covered with thesense dummy conductive section 134.

In this case, the sense emitter electrode 152 is in contact with thefront surface of the sense dummy conductive section 134 within the sensedummy trench as well, and is also in contact with the emitter region 112in the side wall of the sense dummy trench. Thereby, the contact area ofthe emitter region 112 and the sense emitter electrode 152 can beenlarged, and the contact resistance can be decreased.

In the present example, the sense gate trench sections 140 and the sensedummy trench sections 130 are alternately arranged in a predeterminedarray direction as shown in FIG. 4. Also, each trench section may bearranged at regular intervals. However, the arrangement of each trenchsection is not limited to the above-described example. A plurality ofsense gate trench sections 140 may be arranged between two sense dummytrench sections 130. Also, the number of the sense gate trench sections140 provided between each pair of the sense dummy trench sections 130may not be the same.

In addition, the sense gate trench of the sense gate trench section 140may be formed at a position deeper than the sense dummy trench of thesense dummy trench section 130. Thereby, even if the sense gateconductive section 144 and the sense dummy conductive section 134 areformed in the same length and in the same process, the sense dummyconductive section 134 can be filled within the sense dummy trench whileensuring a space to provide the sense gate insulating section 137 withinthe sense gate trench.

The structures of the sense gate trench section 140 and the sense dummytrench section 130 have been described above. As described above,however, the main gate trench section 40 and the main dummy trenchsection 30 also have structures similar to those of the sense gatetrench section 140 and the sense dummy trench section 130.

The main gate trench section 40 has a main gate trench, an insulatingfilm, and a main gate conductive section. The shape, size, position,material and the like of the main gate trench, the insulating film, andthe main gate conductive section in the cross-section parallel with thecross-section along a-a′ may be the same as those of the sense gatetrench, the insulating film 142, and the sense gate conductive section144 in the cross-section along a-a′.

The main dummy trench section 30 has a main dummy trench, an insulatingfilm, and a main dummy conductive section. The shape, size, position,material and the like of the main dummy trench, the insulating film, andthe main dummy conductive section in the cross-section parallel with thecross-section along a-a′ may be the same as those of the sense dummytrench, the insulating film 132, and the sense dummy conductive section134 in the cross-section along a-a′.

That is, the main gate trench may be formed at a position deeper thanthe dummy trench. The width of the main gate trench may be larger thanthat of the dummy trench. At least a part of an end surface of the maindummy conductive section closer to an opening of the main dummy trenchhas the same height as the front surface of the semiconductor substrate10, and the main emitter electrode may be in contact with the endsurface of the main dummy conductive section. At least a part of an endsurface of the main gate insulating section closer to an opening of themain gate trench has the same height as the front surface of thesemiconductor substrate 10, and the main emitter electrode may be incontact with the end surface of the main gate insulating section.

The main transistor section 104 has the main emitter electrode 52, theemitter region 12, the base region 14, the accumulation region 116, thedrift region 18, the buffer region 20, the collector region 22, and thecollector electrode 24 in the cross-section in parallel with thecross-section along a-a′. The shape, size, position, material, and thelike of the main emitter electrode 52, the emitter region 12, the baseregion 14, the accumulation region 116, the drift region 18, the bufferregion 20, the collector region 22, and the collector electrode 24 inthe cross-section in parallel with the cross-section along a-a′ may bethe same as those of the sense emitter electrode 152, the emitter region112, the base region 114, the accumulation region 116, the drift region18, the buffer region 20, the collector region 22, and the collectorelectrode 24 in cross-section along a-a′.

According to the semiconductor device 100 of the present example, the IEeffect on the drift region can be increased and the on-voltage can bedecreased by providing the main dummy trench section 30 and the sensedummy trench section 130. Also, unevenness on the front surface of thesemiconductor substrate 10 can be decreased by providing the gateinsulating section inside the gate trench. Also, unevenness on the frontsurface of the semiconductor substrate 10 can be decreased by bringingthe emitter electrode and the dummy conductive section into directcontact with each other. For this reason, the semiconductor device 100can be miniaturized easily.

Also, in the semiconductor device 100 of the present example, the dummyconductive sections within the trenches of the main dummy trench section30 and the sense dummy trench section 130 are in direct contact with themain emitter electrode 52 and the sense emitter electrode 152,respectively. That is, other conductive materials such as polysiliconare not provided between the dummy conductive section and the emitterelectrode. For this reason, unevenness of the front surface of thesemiconductor substrate 10 can be decreased. Also, the entire frontsurface of the dummy conductive section may have the same height as thesurface of the semiconductor substrate 10. In this case, unevenness ofthe front surface of the semiconductor substrate 10 can be furtherdecreased. Therefore, the structure laminated over the front surface ofthe semiconductor substrate 10 can be easily formed.

Also, the semiconductor device 100 may not have an insulating film onthe front surface of the emitter region 12 and the emitter region 112 inthe mesa region between the gate trench section and the dummy trenchsection. That is, the front surface of the emitter region in the mesaregion may all be in contact with the emitter electrode. When theinsulating film is provided over each trench section, the insulatingfilm covers a part of the front surface of the emitter region of themesa region. Also, the size of the insulating film has manufacturingtolerance. For this reason, it is difficult to miniaturize thesemiconductor device and narrow a mesa width. Meanwhile, according tothe semiconductor device 100, the insulating film may not be provided onthe front surface of the emitter region in the mesa region, and thus thesemiconductor device 100 can be further miniaturized.

In addition, the structure of each trench section is not limited to theexample shown in FIG. 4. The gate trench section and the dummy trenchsection may be formed at the same depth and width. Also, the insulatingfilm that covers each trench section may be formed on the front surfaceof the semiconductor substrate 10, and the conductive material such aspoly silicon connected to the conductive section within each trench mayalso be formed.

Next, one example of the method of manufacturing the semiconductordevice 100 shown in FIG. 1 to FIG. 4 will be described. However, themethod of manufacturing the semiconductor device 100 is not limited tothe present example. First, the semiconductor substrate 10 having thesame conductivity type as the drift region 18 is prepared (will bedescribed as N⁻-type in the present example).

Next, an etching mask of a predetermined pattern is provided on thefront surface of the semiconductor substrate 10, and a plurality oftrenches for the main gate trench section 40, the main dummy trenchsection 30, the sense gate trench section 140, and the sense dummytrench section 130 is formed. After the trench is formed, the insulatingfilm is formed in the inner wall of the trench. Then, the conductivematerial is filled within the trench.

Next, P-type impurities are injected into the semiconductor substratefrom its front surface side, and the semiconductor substrate isthermally treated for approximately two hours at a temperature ofapproximately 1100 degrees, and then P-type base regions 14 and 114which are shallower than the trenches are formed on the entire frontsurface of the semiconductor substrate 10. Next, N-type impurities areinjected into the semiconductor substrate 10 from its front surfaceside, and then an N-type accumulation region 116 which is deeper thanthe base region and shallower than the trench is formed. For example,the N-type accumulation region 116 is formed by ion-implantingphosphorus at an accelerating voltage of approximately 2.8 MeV, and at5.0×10¹²/cm².

Next, N-type impurities are selectively injected into the semiconductorsubstrate 10 from its front surface side using a mask having thereinopening portions corresponding to the emitter regions 12 and 112.Thereby, N⁺-type emitter regions 12 and 112 are selectively formedwithin P-type base regions 14 and 114.

After that, the interlayer insulating film 26 is formed in thesemiconductor substrate 10 on its front surface side. The interlayerinsulating film 26 is formed over the conductive section in the trenchas well. The interlayer insulating film 26 formed within the gate trenchfunctions as a gate insulating section.

Also, the contact hole is formed in each interlayer insulating film 26.Moreover, an emitter electrode and a gate electrode are formed. Next,after selenium is ion-implanted at, for example, approximately1.0×10¹⁴/cm² into the semiconductor substrate 10 from its rear surfaceside, the semiconductor substrate 10 is thermally treated forapproximately two hours at a temperature of approximately 900 degrees.Thereby, a buffer region 20 of N⁺-type is formed in the semiconductorsubstrate 10 on its rear surface side. A remained region of N⁻-type ofthe semiconductor substrate 10 is the drift region 18. The buffer region20 can be formed at a deep position by using selenium having a highdiffusion coefficient. Also, the semiconductor substrate 10 may bepolished to adjust the thickness before the buffer region 20 is formed.

The N⁺-type buffer region 20 may be formed by ion-implanting proton aplurality of times at different dosages, instead of ion implantation ofselenium. Thereby, the buffer region 20 in which the impurityconcentration increases in the substrate from its front surface side toits rear surface side can be formed.

Next, P-type impurities are ion-implanted at a dosage of, for example,1.0×10¹³/cm²or more and 4.0×10¹³/cm² or less from the rear surface sideof the semiconductor substrate 10. Thereby, the P⁺-type collector region22 which is thinner than the buffer region 20 is formed in thesemiconductor substrate 10 on its rear surface side. When a dosage ofthe P-type impurities is less than 1.0×10¹³/cm², the collector regionand the collector electrode cannot form an ohmic junction, and thus thisdosage is not preferable.

FIG. 5 is a plan view showing another example of the main transistorsection 104 and the sense transistor section 108. The main transistorsection 104 in the present example is provided in the active region 102,and has the main gate trench section 40 separated from the sense gatetrench section 140 within the semiconductor substrate 10. The main gatetrench section 40 has the opposing section 41 and the protruding section43

The opposing section 41 is provided at a position that opposes the maindummy trench section 30. The protruding section 43 is provided extendingfrom the opposing section 41 and is provided at a position that does notoppose the main dummy trench section 30. The entire protruding section43 in the present example is formed in the main well region 17. Theprotruding section 43 may have the same shape as that of the protrudingsection 143. The protruding section 43 connects two opposing sections 41at both sides of the main dummy trench section 30.

Also, a contact hole 55 is provided corresponding to a part of theprotruding section 43. The contact hole 55 may be provided in a regionof the protruding section 43 closest to the sense transistor section108. The protruding section 43 has a portion that extends insubstantially parallel with the array direction of the trench section ina region closest to the sense transistor section 108. The contact hole55 may be formed corresponding to the portion.

The semiconductor device 100 of the present example has the gateelectrode 50 at a position that covers the contact holes 55. At least apart of the gate electrode 50 is formed over the main well region 17.The entire gate electrode 50 may be formed over the main well region 17.The same potential as the gate electrode 151 may be applied to the gateelectrode 50. The gate electrode 50 may be formed of the same materialas the gate electrode 151.

The protruding section 143 of the sense gate trench section 140 closerto the main transistor section 104 extends into the main well region 17.However, the protruding section 143 of the present example is notconnected to the main gate trench section 40. The protruding section 143connects two opposing sections 141 at both sides of the sense dummytrench section 130. The protruding section 143 has a portion extendingin substantially parallel with the array direction of the trench sectionin a region closest to the main gate trench section 40. The portion ofthe protruding section 143 is provided in a region covered with the gateelectrode 50. The semiconductor device 100 may be further provided withthe contact hole 155 provided corresponding to the portion of theprotruding section 143.

The contact hole 155 exposes the sense gate conductive section 144 atthe portion of the protruding section 143. The gate electrode 50 is incontact with the sense gate conductive section 144 through the contacthole 155. That is, the gate electrode 50 is in contact with both themain gate conductive section 44 and the sense gate conductive section144. Thereby, the main gate conductive section 44 and the sense gateconductive section 144 are electrically connected. By also such aconstitution, the sense transistor section 108 can be caused to followthe voltage fluctuations of the main transistor section 104.

Also, the gate pad 103 may be formed adjacent to the sense transistorsection 108. The gate pad 103 may be the same as the gate pad 103 shownin FIG. 2. In the example shown in FIG. 5, the main gate trench section40 that opposes the gate pad 103 and the main gate trench section 40that opposes the sense transistor section 108 may have the samestructure. Also, the structure of the main gate trench section 40 thatopposes the gate pad 103 may have the same structure as the main gatetrench section 40 that opposes the gate pad 103 shown in FIG. 2. Any ofthe main gate trench sections 40 is provided separately from the sensegate trench section 140 within the semiconductor substrate 10.

The gate electrode 50 may be integrally formed with the gate electrode151 provided corresponding to the sense transistor section 108. The gateelectrode 50, the main emitter electrode 52, the main well region 17,and the contact hole 54 may be consecutively formed in both the regionthat opposes the gate pad 103 and the region that opposes the sensetransistor section 108.

FIG. 6 is a plan view showing another example of the main transistorsection 104 and the sense transistor section 108. In the presentexample, the main gate trench section 40 that opposes the sensetransistor section 108 has a plurality of the first trench sections 161and one or more second trench sections 162. The first trench section 161is provided extending in a predetermined direction. The first trenchsection 161 of the present example is provided in parallel with the maindummy trench sections 30. Also, the first trench section 161 isconnected to the sense gate trench section 140.

The second trench section 162 is provided extending in a directiondifferent from the extending direction of the first trench section 161.The second trench section 162 of the present example extends in adirection orthogonal to the first trench section 161. The second trenchsection 162 connects two adjacent first trench sections 161. The secondtrench section 162 may be formed in the main well region 17.

The second trench section 162 may be formed between each pair of thefirst trench sections 161. As shown in FIG. 6, the second trench section162 may be provided to connect three or more first trench sections 161.

The second trench section 162 is provided below the gate electrode 50.The interlayer insulating film 26 between the second trench sections 162and the gate electrode 50 is provided with the contact hole 55. Thecontact hole 55 exposes the front surface of the main gate conductivesection 44 in the second trench section 162. The main gate insulatingsection is not formed in at least the portion of the second trenchsection 162. The main gate insulating section may not be formed acrossthe entire second trench sections 162. The gate electrode 50 is incontact with the front surface of the main gate conductive section 44through the contact hole 55. By also such a constitution, the sensetransistor section 108 can be caused to follow the voltage fluctuationsof the main transistor section 104.

In addition, the second trench section 162 may be formed shallower thanthe first trench section 161. The second trench section 162 may beformed at the same depth as the main dummy trench section 30. The secondtrench section 162 may be formed thinner than the first trench section161. The second trench section 162 may be formed at the same thicknessas the main dummy trench section 30.

Also, the gate pad 103 may be formed adjacent to the sense transistorsection 108. The gate pad 103 may be the same as the gate pad 103 shownin FIG. 2. In the example shown in FIG. 6, the main gate trench section40 that opposes the gate pad 103 and the main gate trench section 40that opposes the sense transistor section 108 have different shapes fromeach other. In the present example, the main gate trench section 40 thatopposes the gate pad 103 is separated from the sense gate trench section140 within the semiconductor substrate 10, and the main gate trenchsection 40 that opposes the sense transistor section 108 is connected tothe sense gate trench section 140 within the semiconductor substrate 10.

The gate electrode 50 may be integrally formed with the gate electrode151 provided corresponding to the sense transistor section 108. The gateelectrode 50, the main emitter electrode 52, the main well region 17,and the contact hole 54 may be consecutively formed in both the regionthat opposes the gate pad 103 and the region that opposes the sensetransistor section 108.

FIG. 7 is a plan view showing one example of the main gate trenchsection 40. FIG. 7 partially shows the main gate trench section 40. InFIG. 7, the main dummy trench section 30 is omitted. The main gatetrench section 40 of the present example has a first trench section 161and a second trench section 162. The second trench sections 162 areformed at a predetermined interval in the extending direction of thefirst trench section 161.

The semiconductor device 100 has one or more gate electrodes 50 passingover each second trench section 162. The contact hole 55 is provided foreach second trench section 162. The gate electrode 50 is in contact withthe second trench sections 162 through the contact hole 55.

Also, the gate electrode 50 is provided crossing over the plurality offirst trench sections 161 and functions as a gate runner transmitting agate potential in the array direction of the trench section. The samepotential is applied to each gate electrode 50. The main emitterelectrode 52 is provided between each of the gate electrodes 50.

The main well region 17 may be formed around the second trench sections162. The base region 14, the contact region 15, and the emitter region12 may be formed between each of the second trench sections 162. Themain emitter electrode 52 is in contact with the base region 14, thecontact region 15, the emitter region 12, and the first trench section161 through the contact hole 54.

Also, the main dummy trench section 30 may be formed within a regionsurrounded by the first trench section 161 and the second trench section162. The main dummy trench section 30 and the second trench section 162are provided separately. By such a constitution, a uniform gatepotential can be applied to the main gate trench section 40.

FIG. 8 is a plan view showing another example of the main gate trenchsection 40. FIG. 8 partially shows the main gate trench section 40. Thesemiconductor device 100 of the present example has a plurality of gateelectrodes 50 arranged discretely in the extending direction of thetrench section. The same potential is applied to each gate electrode 50.The main emitter electrode 52 is provided between each pair of the gateelectrodes 50.

Each gate electrode 50 is provided crossing over the plurality of maingate trench sections 40 and the plurality of main dummy trench sections30. The interlayer insulating film 26 is provided between the gateelectrode 50 and each trench section. The contact hole 55 is provided inthe interlayer insulating film 26 between the gate electrode 50 and themain gate trench section 40. The gate electrode 50 is in contact withthe main gate conductive section 44 through the contact hole 55.

The main gate trench section 40 below the contact hole 55 is notprovided with the main gate insulating section. The main gate trenchsection 40 below the contact hole 55 may be formed shallower than themain gate trench section 40 of other regions. The main gate trenchsection 40 below the contact hole 55 may be formed thinner than the maingate trench section 40 of other regions. With such a constitution, auniform gate potential can be applied to the main gate trench section40.

FIG. 9 shows the constitution of the semiconductor device 200 accordingto a comparative example. The semiconductor device 200 has a transistorsection 270 and a diode section 280. Also, the semiconductor device 200has a gate electrode 250, an emitter electrode 252, a gate trenchsection 240, a dummy trench section 230, an emitter trench section 260,a well region 217, an emitter region 212, a base region 214, a contactregion 215, contact holes 226, 228, 249, and 254, and polysilicon layers221, 225, and 248 on its front surface side.

FIG. 10 shows a cross-section along c-c′ in FIG. 9. The semiconductordevice 200 has a semiconductor substrate 210, the emitter electrode 252,an insulating section 238, and a collector electrode 224 in thecross-section. The emitter electrode 252 is electrically connected to anemitter terminal 253.

In the semiconductor substrate 210, the gate trench section 240, thedummy trench section 230, the emitter trench section 260, the emitterregion 212, the base region 214, an accumulation region 216, a driftregion 218, a buffer region 220, a collector region 222, and a cathoderegion 282 are formed. The gate trench section 240 has an insulatingfilm 242 and a gate conductive section 244. The gate conductive section244 is electrically connected to a gate terminal 251. The dummy trenchsection 230 has an insulating film 232 and a dummy conductive section234. The emitter trench section 260 has an insulating film 262 and anemitter conductive section 264.

The insulating section 238 is provided covering each of the gate trenchsections 240, the dummy trench sections 230, and the emitter trenchsections 260 on the front surface of the semiconductor substrate 10.However, the insulating section 238 exposes at least a part of the frontsurface of the emitter region 212 in the mesa region between the gatetrench section 240 and the dummy trench section 230. The emitterelectrode 252 is in contact with the front surface of the emitter region212.

The area of the emitter region 212 not covered with the insulatingsection 238 changes depending on the manufacturing tolerance of theinsulating section 238. For this reason, in order to expose at least apart of the emitter region 212, the manufacturing tolerance of theinsulating section 238 must be taken into consideration. Particularly,in the present example, the insulating section 238 is formed at bothsides of the mesa region, and thus the width of the mesa region isaffected by the tolerance of the insulating section 238 at both sides.For this reason, if the semiconductor device 200 is miniaturized, it isdifficult to reliably expose the emitter region 212, and thus it isdifficult to miniaturize the semiconductor device 200. Meanwhile,according to the semiconductor device 100 shown in FIG. 4, theinsulating film that covers the main gate trench section 40 and the maindummy trench section 30 is not provided on the front surface of thesemiconductor substrate 10, and thus the emitter region 12 and the mainemitter electrode 52 can be in contact with each other even if thesemiconductor device 100 is miniaturized.

Also, in the semiconductor device 200, patterning on the insulatingsection 238 is performed on the front surface of the semiconductorsubstrate 210. For this reason, unevenness is formed on the frontsurface of the semiconductor substrate 210. Meanwhile, in thesemiconductor device 100 shown in FIG. 4, the insulating section 238 isnot provided on the front surface of the semiconductor substrate 10, andthus unevenness on the surface of the semiconductor substrate 10 can bedecreased.

FIG. 11 shows the cross-section along d-d′ in FIG. 9. The semiconductordevice 200 is provided with the semiconductor substrate 210, the emitterelectrode 252, the gate electrode 250, the collector electrode 224, thepolysilicon layer 221, the polysilicon layer 248, and the insulatingsection 238 on the cross-section.

The polysilicon layer 221 and the polysilicon layer 248 are formed onthe front surface of the semiconductor substrate 210, and they connectthe conductive section within each trench and either of the emitterelectrode 252 or the gate electrode 250. The semiconductor device 200selectively has a polysilicon layer 221 and a polysilicon layer 248 onthe front surface of the semiconductor substrate 210. For this reason,unevenness is generated on the front surface of the semiconductorsubstrate 210, and thus it is not easy to form a layer such as theinsulating section 238 to be formed over the front surface of thesemiconductor substrate 210.

Meanwhile, according to the semiconductor device 100 shown in FIG. 3 andFIG. 4, the main emitter electrode 52 is brought into direct contactwith the conductive section within each trench, and thus the polysiliconlayer may not be formed on the front surface of the semiconductorsubstrate 10. For this reason, unevenness on the front surface of thesemiconductor substrate 10 can be decreased.

FIG. 12 shows a cross-section of the semiconductor device 100 accordingto the second embodiment. In the semiconductor device 100 of the presentexample, a threshold voltage of the sense transistor section 108 ishigher than a threshold voltage of the main transistor section 104. Morespecifically, the length Da1 of the emitter region 112 in the sensetransistor section 108 in the depth direction is shorter than the lengthDb1 of the emitter region 12 in the main gate trench section 40 in thedepth direction.

The base region 114 in the sense transistor section 108 and the baseregion 14 in the main transistor section 104 are formed at the samedepth. However, the emitter region 112 and the emitter region 12 havedifferent lengths in the depth direction, and thus the length Da2 of thebase region 114 adjacent to the sense gate trench section 140 is longerthan the length Db2 of the base region 14 adjacent to the main gatetrench section 40.

The length of the base region adjacent to the gate trench corresponds toa channel length. For this reason, by the above-described structure, thethreshold voltage of the sense transistor section 108 is higher than thethreshold voltage of the main transistor section 104. As a result, therise of the sense transistor section 108 at turn-on is slower than therise of the main transistor section 104 at turn-on, and thus thegeneration of a surge current in the sense transistor section 108 can besuppressed. As a result, a protection circuit or the like using thesense transistor section 108 can be operated stably.

In the present example, the main gate trench section 40 is formed at aposition deeper than the sense gate trench section 140. However, themain gate conductive section 44 and the sense gate conductive section144 have the same length in the depth direction. As a result, theposition on the top surface of the main gate conductive section 44 isdeeper than the position on the top surface of the sense gate conductivesection 144.

As will be described later, the emitter region 12 in the main gatetrench section 40 can be formed at a position deeper than the emitterregion 112 in the sense transistor section 108 by injecting anddiffusing the N-type impurities into the side wall of the gate trench byusing each gate conductive section as a mask. By such a manufacturingmethod, transistors having different threshold values can be easilyformed.

In addition, a main gate trench and a sense gate trench having differentdepths may be formed by performing etching on the front surface of thesemiconductor substrate 10 using masks having a plurality of openingswith different areas. When the opening area of the mask is large, a deepgate trench can be formed. Thereby, the threshold voltages of eachtransistor section can be adjusted while the gate trenches 48 havingdifferent depths can be formed simultaneously to make the manufacturingstep more efficient. In addition, the structures of other portions inthe semiconductor device 100 of the present example may be the same asthose of any of the semiconductor devices 100 illustrated in FIG. 1 toFIG. 8.

FIG. 13 shows a cross-section along the gate trench when the structureshown in FIG. 12 is applied to the semiconductor device 100 shown inFIG. 2 or FIG. 6. As illustrated in FIG. 12, in the semiconductor device100 of the present example, the depths and the widths of the main gatetrench section 40 and the sense gate trench section 140 are different.Meanwhile, in the semiconductor device 100 shown in FIG. 2 or FIG. 6,the main gate trench section 40 and the sense gate trench section 140are connected.

The semiconductor device 100 of the present example has a connectiongate trench section 156 that connects the main gate trench section 40and the sense gate trench section 140. One end of the connection gatetrench section 156 is connected to the main gate trench section 40 andthe other end of the connection gate trench section 156 is connected tothe sense gate trench section 140. The depth and the width of theconnection gate trench section 156 gradually changes from one end to theother end. By such a structure, it is possible to avoid a rapid changeof the structure and prevent electric field concentration. Also, theconnection gate trench section 156 has an insulating section thatconnects the main gate insulating section 37 and the sense gateinsulating section 137. The thickness of the insulating section alsogradually changes.

In addition, it is preferable that the connection gate trench section156 is formed in either one or both of the sense well region 117 and themain well region 17. The connection gate trench section 156 can beprotected by surrounding the connection gate trench section 156 by thewell region having a high concentration.

FIG. 14 shows a variation of the structure of the gate trench section.In addition, although the following example will be described using themain gate trench section 40, a similar example is applied to the sensegate trench section 140. Also, in the following example, the structurein the semiconductor substrate 10 is shown, and there are cases wherethe interlayer insulating film, the metal electrode, or the like isomitted. Also, although an accumulation region 16 is omitted in thefollowing example, the semiconductor device 100 may have theaccumulation region 16.

An upper end 45 of the main gate conductive section 44 is provided at aposition deeper than the front surface of the semiconductor substrate10. That is, the upper end 45 of the main gate conductive section 44falls into the gate trench 48. The upper end 45 of the main gateconductive section 44 refers to an end portion which is on the uppermostside of the main gate conductive section 44.

In a region within the gate trench 48 where the main gate conductivesection 44 and the insulating film 42 are not provided, the main gateinsulating section 37 is provided. Thereby, the main gate conductivesection 44 is insulated from the main emitter electrode 52.

The main gate conductive section 44 at least includes a region thatopposes the adjacent base region 14. When a predetermined voltage isapplied to the main gate conductive section 44, a channel is formed onthe surface layer of the interface that is in contact with the gatetrench 48 in the base region 14.

In addition, in the cross-section of the semiconductor substrate 10 inthe depth direction, an average tilt of the side wall of the gate trench48 between the upper end 45 of the main gate conductive section 44 andthe front surface of the semiconductor substrate 10 is larger than atilt of the side wall at a position that opposes the upper end 45 of themain gate conductive section 44. In addition, the term of “tilt” in thepresent specification refers to a tilt with respect to the depthdirection of the semiconductor substrate 10 in the cross-section, unlessclearly indicated otherwise. For example, the “tilt” on the frontsurface of the semiconductor substrate 10 is substantially 90 degreesand the “tilt” of the straight line in parallel with the depth directionis zero degree. In addition, the average tilt of the side wall in apredetermined range of the gate trench 48 may be calculated byintegrating the tilt of the side wall of the gate trench 48 in thecross-section over a given length of the side wall of the gate trench48, and dividing the integration value with the predetermined length.

The gate trench 48 of the present example has a shoulder section 33 in aregion that is in contact with the front surface of the semiconductorsubstrate 10. The shoulder section 33 is formed between the main gateconductive section 44 and the front surface of the semiconductorsubstrate 10 (that is, above the upper end 45 of the main gateconductive section 44) in the side wall of the gate trench 48. In thecross-section, the average tilt of the side wall of the gate trench 48in the shoulder section 33 is smaller than the tilt of the side wall ata position that opposes the upper end 45 of the main gate conductivesection 44. In addition, the tilt of the side wall of the gate trench 48between the shoulder section 33 and the upper end 45 of the main gateconductive section 44 may be substantially equal to the tilt of the sidewall of the gate trench 48 at a position that opposes the upper end 45of the main gate conductive section 44.

In this way, the depth of the emitter region 12 in the region that is incontact with the gate trench 48 can be easily controlled by increasingthe tilt of the side wall of the gate trench 48 above the upper end 45of the main gate conductive section 44. The length of the remained baseregion 14 can be controlled by controlling the depth of the emitterregion 12. The length of the base region 14 that is in contact with thegate trench 48 corresponds to the channel length. For this reason, thethreshold voltage of the main transistor section 104 becomes easier tobe controlled.

FIG. 15 illustrates a part of a step of manufacturing the main gatetrench section 40 and the emitter region 12 in the semiconductor device100. First, in a gate trench forming step S300, the gate trench 48 isformed on the front surface of the semiconductor substrate 10. The gatetrench 48 has a shoulder section 33 in a region that is in contact withthe front surface of the semiconductor substrate 10. For example, thegate trench 48 having the shoulder section 33 may be formed byperforming etching on the front surface of the semiconductor substrate10 using a first mask having a predetermined opening to form the trench,and then performing etching on the edge portion of the trench using asecond mask having an opening larger than that of the first mask.

Next, in a gate conductive section forming step S302, the insulatingfilm 42 and the main gate conductive section 44 are formed in the innerwall of the gate trench 48. The insulating film 42 may be formed byoxidizing the semiconductor substrate 10. In addition, the main gateconductive section 44 is formed such that the upper end 45 of the maingate conductive section 44 is at a position deeper than the frontsurface 11 of the semiconductor substrate 10. In the present example,the upper end 45 of the main gate conductive section 44 is providedbelow the shoulder section 33. The main gate conductive section 44 isformed by polysilicon doped with impurities, for example.

After the main gate conductive section 44 is formed, the P-typeimpurities are injected and diffused into the front surface of thesemiconductor substrate 10, and then the base region 14 is formed. TheP-type impurities are boron, for example. The diffusion temperature ofthe base region 14 is approximately 1100 degrees, for example. Inaddition, the main gate trench section 40 may be formed after the baseregion 14 is formed.

Next, in an emitter region forming step S304, the N-type impurities areinjected and diffused into the semiconductor substrate 10. The N-typeimpurities are arsenic, for example. Also, the P-type impurities such asboron are injected and diffused into the contact region 15. Theimpurities of the emitter region 12 and the contact region 15 may bediffused in the same step. The temperature of the diffusion step may belower than the diffusion temperature of the base region 14. Thetemperature of the diffusion step is 1000 degrees or less, for example.

Thereby, the emitter region 12 is formed. In addition, in step S304, theimpurities are injected into not only the front surface of thesemiconductor substrate 10, but also the side wall of the gate trench 48as well by using the main gate conductive section 44 as a mask. By sucha method, the emitter region 12 is formed such that the portion that isin contact with the gate trench 48 is the deepest.

In step S304, the N-type impurities are diffused to the depthcorresponding to the threshold voltage that the transistor sectionshould have in the region that is in contact with the gate trench 48.When the impurities are diffused at a deeper position, the impuritiesneed to be thermally treated for a longer period of time or at a highertemperature. However, performing thermal treatment over a long period oftime degrades the manufacturing efficiency, and thus the thermaltreatment at a high temperature is preferable. However, when theimpurities are thermally treated at a high temperature, the length inwhich the impurities are diffused increases per unit time, and thus itis difficult to control the diffusion depth of the impurities.

Meanwhile, in the present example, the gate trench 48 has the shouldersection 33, and thus the length over which the impurities are diffusedin the region that is in contact with the gate trench 48 can bedecreased. That is, in a region where the shoulder section 33 isprovided, the impurities are injected below the front surface 11 of thesemiconductor substrate 10. For this reason, when the emitter region 12having a predetermined depth is formed, the length over which theimpurities must be diffused can be decreased.

For this reason, even if the impurities are diffused at a lowertemperature, the thermal treatment time is not long, and thus themanufacturing efficiency does not degrade. Moreover, the impurities canbe diffused at a low temperature, and thus the depth of the emitterregion 12 in the region that is in contact with the gate trench 48 canbe accurately controlled.

Also, the gate trench 48 has the shoulder section 33, so that the areaof the mesa region sandwiched by the main gate trench sections 40 can bemade small. For this reason, an electric injection enhancement effect(IE effect) can be obtained.

In addition, in S304, the impurities may be injected into the side wallof the gate trench 48 relative to the depth direction of thesemiconductor substrate 10 from a direction having a predetermined tiltθ1. Thereby, the impurities can be efficiently injected. The tilt θ1 is10 degrees or less, for example.

Also, the emitter region 12 is formed in a self-aligned manner takingthe main gate conductive section 44 as a mask, and thus the emitterregion 12 can be caused to be easily in contact with the main gatetrench section 40. Meanwhile, when the emitter region 12 is formed usinga mask independent from the main gate trench section 40, there are casein which the emitter region 12 and the main gate trench section 40 arenot in contact with each other due to the manufacturing toleranceincluding alignment of the mask, and thus the semiconductor device 100cannot be operated.

FIG. 16 illustrates the shape of the main gate trench section 40. In thepresent example, a tilt of the side wall of the gate trench 48 in theposition 31 that opposes the upper end 45 of the main gate conductivesection 44 is θ2. Also, the width of the shoulder section 33 in theopening of the gate trench 48 in its diameter direction and the lengthof the shoulder section 33 in the opening of the gate trench 48 in itsdepth direction are W1 and D1, respectively. In addition, a startingpoint of the shoulder section 33 may be the end portion of the side wallof the gate trench 48 on the front surface 11 of the semiconductorsubstrate 10. Also, an end point of the shoulder section 33 may be aposition where the tilt of the side wall of the gate trench 48 is largerthan the tilt θ2 of the side wall of the gate trench 48 by apredetermined value or more when going through the side wall of the gatetrench 48 from the position 31 toward the front surface 11 of thesemiconductor substrate 10. As one example, the predetermined value is10 degrees. The predetermined value may be zero degree, 20 degrees, or30 degrees.

The shoulder section 33 may have a protruding curved surface sectiontoward the interior of the semiconductor substrate 10. That is, the tiltof the shoulder section 33 increases as the distance from the frontsurface of the semiconductor substrate 10 is longer. By such a shape ofthe shoulder section 33, the impurities can be injected at a deepposition more efficiently. For this reason, the length of the impuritydiffusion for forming the emitter region 12 of the predetermined depthcan be shortened.

Also, the length D1 of the shoulder section 33 may be longer than thewidth W1 of the shoulder section 33. Thereby, the opening area of thegate trench 48 can be made small and miniaturized, and also theimpurities can be injected at a deep position in a region adjacent tothe gate trench 48. Also, the length D1 may be equal to the width W1,and the length D1 may be smaller than the width W1.

The width W1 of the shoulder section 33 may be no greater than half ofthe width of the gate trench 48 in the position 31, and may also be ¼ orless of the width of the gate trench 48 in the position 31. Thereby, anincrease in the area of the gate trench 48 on the front surface 11 ofthe semiconductor substrate 10 can be suppressed. Also, the width W1 maybe 1/20 or more of the width of the gate trench 48 in the position 31and may also be 1/10 or more of the width of the gate trench 48 in theposition 31. Thereby, the impurities can be implanted at a deep positionefficiently.

Also, the length D1 of the shoulder section 33 may be no greater thanhalf of the distance R1 between the upper end 45 of the main gateconductive section 44 and the front surface 11 of the semiconductorsubstrate 10. Also, the length D1 may be greater than half of thedistance R1. Also, the length D1 may be substantially equal to thedistance R1. As one example, when the length D1 is 90% or more and 110%or less of the distance R1, the length D1 and the distance R1 areregarded to be substantially equal.

Also, the side wall of the gate trench 48 has a portion having a tilt of20 degrees or more between the upper end 45 of the main gate conductivesection 44 and the front surface 11 of the semiconductor substrate 10.For example, at least a part of the tilt θ3 of the shoulder section 33is 20 degrees or more. In this way, the impurities can be efficientlyinjected at a deep position by increasing the tilt of the side wall ofthe gate trench 48 above the upper end 45, and controlling the diffusionof the impurities into the region adjacent to the gate trench 48 can bemade easier.

FIG. 17 illustrates the shapes of the emitter region 12 and the maingate conductive section 44. As described above, the impurities areinjected from the inner wall of the gate trench 48 as well, and thus theemitter region 12 is provided at a position where the lower end 34 ofthe portion adjacent to the gate trench 48 is deeper than otherportions. By such a shape, the length of the base region 14 in theregion adjacent to the gate trench 48 can be controlled, and thethreshold voltage of the semiconductor device 100 can be controlled.

Also, in the emitter region 12, the length D2 of the portion in itsdepth direction that is in contact with the gate trench 48 may be longerthan the length of other portions in the emitter region 12. For example,the length D3 of the emitter region 12 in the mesa region where the gatetrench 48 is not provided is shorter than the length D2.

Also, in the end surface of the main gate conductive section 44 closerto the front surface 11 of the semiconductor substrate 10, the portionadjacent to the side wall of the gate trench 48 (the upper end 45 in thepresent example) is formed at a position closest to the front surface 11of the semiconductor substrate 10. In the present example, among the endsurfaces of the main gate conductive section 44 closer to the frontsurface 11 of the semiconductor substrate 10, the portion 46 positionedat the center of the gate trench 48 is formed at a position farthestfrom the front surface 11 of the semiconductor substrate 10.

As one example, in the end surface of the main gate conductive section44, the distance from the front surface of the semiconductor substrate10 becomes gradually longer from the side wall of the gate trench 48toward the center of the gate trench 48. That is, as the depth from thefront surface 11 of the semiconductor substrate 10 increases, thethickness of the main gate conductive section 44 adjacent to the sidewall of the gate trench 48 gradually increases. As described above, whenthe impurities are implanted at an angle taking the main gate conductivesection 44 as a mask, in a part having a small thickness of the maingate conductive section 44, the impurities are injected into thesemiconductor substrate 10 passing through the main gate conductivesection 44. Thereby, in the region adjacent to the gate trench 48, theimpurities can be easily injected and diffused into a deep position asviewed from the front surface 11 of the semiconductor substrate 10.

FIG. 18A shows a variation of the shape of the shoulder sections 33. Theshoulder section 33 of the present example has a protruding curvedsurface section toward the semiconductor substrate 10 on its front side.That is, the tilt of the shoulder section 33 of the present exampledecreases as the distance from the front surface of the semiconductorsubstrate 10 is longer. By also such a shape, the impurities can beeasily diffused at a deep position as viewed from the front surface 11of the semiconductor substrate 10.

FIG. 18B shows a variation of the shape of the shoulder sections 33. Atleast a part of the shoulder section 33 of the present example has alinear shape. The linear shape has a tilt greater than the tilt θ2 ofthe side wall of the gate trench 48 at a position that opposes the upperend 45 of the main gate conductive section 44 by a predetermined valueor more. The predetermined value may be 10 degrees, may be 20 degrees,and may also be 30 degrees. By also such a shape, the impurities can beeasily diffused at a deep position as viewed from the front surface 11of the semiconductor substrate 10.

FIG. 19 shows one example of the step of manufacturing the main gateconductive section 44. First, the gate trench 48 having the shouldersection 33 is formed on the front surface 11 of the semiconductorsubstrate 10. Next, the insulating film 42 is formed on the gate trench48 and the front surface of the semiconductor substrate 10. Next, theconductive materials 47 are deposited on the gate trench 48 and thefront surface of the semiconductor substrate 10. As the conductivematerials 47 are deposited, the thickness of the conductive materials 47deposited in the side wall increases within the gate trench 48. Also,the conductive material 47 maintains the shape along the shouldersection 33, while the thickness of the conductive material 47 increases.

If the conductive material 47 is filled in the center of the gate trench48, as shown in the lower part of FIG. 19, the conductive materials 47above the opening of the gate trench 48 has a protruding shape below.Then, the main gate conductive section 44 as shown in FIG. 17 is formedby performing etching on the conductive material 47 at a predetermineddepth within the gate trench 48. In this way, the gate trench 48 has theshoulder section, so that the main gate conductive section 44 in whichthe top surface has a downward projection can be formed easily. For thisreason, the impurities can be easily injected into the side surface ofthe gate trench 48.

FIG. 20 shows a configurational example of the sense gate trench section140 and the main gate trench section 40. In the present example, similarto the examples of FIG. 12 and FIG. 13, the threshold voltage of thesense transistor section 108 is higher than the threshold voltage of themain transistor section 104.

In the present example, the distance between the upper end of the sensegate conductive section 144 in the sense gate trench section 140 and thefront surface 11 of the semiconductor substrate 10 is L1. Also, thedistance between the upper end of the main gate conductive section 44 inthe main gate trench section 40 and the front surface 11 of thesemiconductor substrate 10 is L2. The distance L1 is shorter than thedistance L2.

As described above, as the distance between the upper end of the gateconductive section and the front surface 11 of the semiconductorsubstrate 10 is longer, the emitter region adjacent to the gate trench48 is deeper, and the channel length is shortened. For this reason, thechannel length C1 of the sense gate trench section 140 is longer thanthe channel length C2 of the main gate trench section 40. For thisreason, the threshold voltage of the sense gate trench section 140 ishigher than the threshold voltage of the main gate trench section 40.

While the embodiments of the present invention have been described, thetechnical scope of the invention is not limited to the above describedembodiments. It is apparent to persons skilled in the art that variousalterations and improvements can be added to the above-describedembodiments. It is also apparent from the scope of the claims that theembodiments added with such alterations or improvements can be includedin the technical scope of the invention.

The operations, procedures, steps, and stages of each process performedby an apparatus, system, program, and method shown in the claims,embodiments, or diagrams can be performed in any order as long as theorder is not indicated by “prior to,” “before,” or the like and as longas the output from a previous process is not used in a later process.Even if the process flow is described using phrases such as “first” or“next” in the claims, embodiments, or diagrams, it does not necessarilymean that the process must be performed in this order. Also, “on” and“under” in the claims or the specification refer to directions oppositeto each other. However, the term of “on” is not limited to a directionopposite from the gravity direction. Also, the term of “under” is notlimited to the gravity direction.

DESCRIPTION OF REFERENCE NUMERALS

10: semiconductor substrate, 11: front surface, 12: emitter region, 14:base region, 15: contact region, 16: accumulation region, 17: main wellregion, 18: drift region. 20: buffer region, 22: collector region, 24:collector electrode, 26: interlayer insulating film, 30: main dummytrench section, 31: position, 33: shoulder section, 34: lower end, 37:main gate insulating section, 40: main gate trench section, 41: opposingsection, 42: insulating film, 43: protruding section, 44: main gateconductive section, 45: upper end, 46: portion, 47: conductive material,48: gate trench, 50: gate electrode, 51: gate terminal, 52: main emitterelectrode, 53: emitter terminal, 54: contact hole, 55: contact hole,100: semiconductor device, 102: active region, 103: gate pad, 104: maintransistor section, 105: outer region, 106: diode section, 108: sensetransistor section, 109: edge termination structure, 112: emitterregion, 114: base region, 115: contact region, 116: accumulation region,117: sense well region, 120: well separation region, 130: sense dummytrench section, 132: insulating film, 134: sense dummy conductivesection, 137: sense gate insulating section, 140: sense gate trenchsection, 141: opposing section, 142: insulating film, 143: protrudingsection, 144: sense gate conductive section, 151: gate electrode, 152:sense emitter electrode, 154: contact hole, 155: contact hole, 156:connection gate trench section, 161: first trench section, 162: secondtrench section, 200: semiconductor device, 210: semiconductor substrate,212: emitter region, 214: base region, 215: contact region, 216:accumulation region, 217: well region, 218: drift region, 220: bufferregion, 221: polysilicon layer, 222: collector region, 224: collectorelectrode, 225: polysilicon layer, 226: contact hole, 228: contact hole,230: dummy trench section, 232: insulating film, 234: dummy conductivesection, 238: insulating section, 240: gate trench section, 242:insulating film, 244: gate conductive section: 248: polysilicon layer,249: contact hole, 250: gate electrode, 251: gate terminal, 252: emitterelectrode, 253: emitter terminal, 254: contact hole, 260: emitter trenchsection, 262: insulating film, 264: emitter conductive section, 270:transistor section, 280: diode section, 282: cathode region

What is claimed is:
 1. A semiconductor device, comprising: asemiconductor substrate of a first conductivity type; a main transistorsection in an active region on the semiconductor substrate; and a sensetransistor section outside the active region on the semiconductorsubstrate, wherein the active region is provided with a main well regionof a second conductivity type, and wherein the sense transistor sectionhas a sense gate trench section formed extending from the outside of theactive region to the main well region on a front surface of thesemiconductor substrate.
 2. The semiconductor device according to claim1, wherein the semiconductor substrate has: a sense well region of asecond conductivity type outside the active region; and a wellseparation region of a first conductivity type that separates the sensewell region and the main well region, wherein the sense gate trenchsection is formed crossing the well separation region on the frontsurface of the semiconductor substrate.
 3. The semiconductor deviceaccording to claim 1, further comprising a diode provided in the activeregion on the semiconductor substrate, wherein the sense transistorsection is provided at a position that does not oppose the diode.
 4. Thesemiconductor device according to claim 2, wherein the main transistorsection has a main gate trench section electrically connected to thesense gate trench section.
 5. The semiconductor device according toclaim 4, wherein the main gate trench section is provided within thesemiconductor substrate separately from the sense gate trench section.6. The semiconductor device according to claim 5, further comprising agate electrode provided over the main well region, wherein the main gatetrench section has a main gate trench formed on the front surface of thesemiconductor substrate, and a main gate conductive section formedwithin the main gate trench, wherein the sense gate trench section has asense gate trench formed on the front surface of the semiconductorsubstrate, and a sense gate conductive section formed within the sensegate trench, and wherein the gate electrode is in contact with both themain gate conductive section and the sense gate conductive section. 7.The semiconductor device according to claim 4, wherein the main gatetrench section is connected to the sense gate trench section within thesemiconductor substrate.
 8. The semiconductor device according to claim7, wherein the main gate trench section has a plurality of first trenchsections provided extending in a predetermined extending direction, anda second trench section which is provided extending in a directiondifferent from the extending direction and which connects two adjacentfirst trench sections.
 9. The semiconductor device according to claim 8,further comprising a gate electrode formed passing over the secondtrench section, and crossing over a plurality of the first trenchsections.
 10. The semiconductor device according to claim 1, wherein themain transistor section has a plurality of main gate trench sectionsprovided in the active region, and a dummy trench section providedbetween the plurality of main gate trench sections in the active region.11. The semiconductor device according to claim 10, further comprising agate electrode formed crossing over the plurality of main gate trenchsections and over the dummy trench section.
 12. The semiconductor deviceaccording to claim 10, further comprising an emitter electrodecontaining a metal, formed over the front surface of the semiconductorsubstrate, wherein the main gate trench section has a main gate trenchformed on the front surface of the semiconductor substrate, a main gateconductive section formed within the main gate trench, and a main gateinsulating section which is formed over the main gate conductive sectionwithin the main gate trench, and which insulates the main gateconductive section and the emitter electrode, and wherein the dummytrench section has a dummy trench formed on the front surface of thesemiconductor substrate, and a dummy conductive section which is formedwithin the dummy trench and which is in contact with the emitterelectrode.
 13. The semiconductor device according to claim 12, whereinthe sense gate trench section has a sense gate trench formed on thefront surface of the semiconductor substrate, a sense gate conductivesection formed within the sense gate trench, and a sense gate insulatingsection which is formed over the sense gate conductive section withinthe sense gate trench, and which insulates the sense gate conductivesection and the emitter electrode.
 14. The semiconductor deviceaccording to claim 12, wherein the main gate trench is formed at aposition deeper than the dummy trench.
 15. The semiconductor deviceaccording to claim 14, wherein a width of the main gate trench is largerthan that of the dummy trench.
 16. The semiconductor device according toclaim 12, wherein at least a part of an end surface of the dummyconductive section closer to an opening of the dummy trench has the sameheight as that of the front surface of the semiconductor substrate, andthe emitter electrode is in contact with the end surface of the dummyconductive section.
 17. The semiconductor device according to claim 16,wherein at least a part of an end surface of the main gate insulatingsection closer to an opening of the main gate trench has the same heightas that of the front surface of the semiconductor substrate, and theemitter electrode is in contact with the end surface of the main gateinsulating section.
 18. The semiconductor device according to claim 4,wherein on the semiconductor substrate, an emitter region adjacent tothe sense gate trench section, and an emitter region which is formed ata position deeper than the emitter region adjacent to the sense gatetrench section and which is adjacent to the main gate trench section areformed.
 19. The semiconductor device according to claim 18, wherein thesense gate trench section has a sense gate conductive section within atrench, wherein the main gate trench section has a main gate conductivesection within a trench, and wherein a distance from the front surfaceof the semiconductor substrate to an upper end of the sense gateconductive section is shorter than a distance from the front surface ofthe semiconductor substrate to an upper end of the main gate conductivesection.
 20. The semiconductor device according to claim 18, furthercomprising a connection gate trench section which connects the sensegate trench section and the main gate trench section, wherein theconnection gate trench section is formed in at least one of the mainwell region and the sense well region.